Specification: Origin: Mainland China Type: Module Condition: New Address: 1010+A-2+A-1+A0 Default value: 0 x 50 VCC/Logic: 2.7-5.5V Product size: 21.00x15.00x3.00mm Product size: 0.83x0.59x0.12inch Note: Due to the different monitor and light effect, the actual color of the item might be slightly different from the color showed on the pictures. Thank you! Please allow 1-2cm measuring deviation due to manual measurement. Included: 1 x  FRAM  Breakout Board 1.Non-volatile FRAM: FRAM is a non-volatile memory technology of FRAM breakout board that allows for effortless read and write operations up to an astonishing 10 trillion times. This durability ensures long-lasting performance and reliability for your data storage needs. 2.Similar to DRAM with Ferroelectric Layer: Functioning similarly to dynamic random-access memory (DRAM), our FRAM breakout board uses a ferroelectric layer instead of a dielectric layer. This unique design enhances the overall performance and efficiency of the memory, ensuring faster data access and reduced power consumption. 3.Low-Power Data Logging: Our FRAM breakout is specifically designed to work seamlessly with low-power data recorders and effectively buffers data in situations where a stable voltage source is not available. This makes it an excellent choice for applications requiring reliable data retention even in challenging environments. 4.32KB Memory: The FRAM chip we utilize provides a generous 32KB of storage capacity, allowing for ample data storage. Additionally, it operates at a high clock speed of up to 20 MHz, ensuring swift data read and write operations, ideal for demanding applications. 5.Instant Read/Write: Each byte of our VCC/Logic FRAM breakout board module offers instantaneous read and write capabilities. Moreover, at room temperature, the memory can preserve data for many years, providing the perfect balance between real-time accessibility and long-term data retention.